MA2SD30 - Panasonic Semiconductor

MA2SD30 Schottky Barrier Diodes

www.DataSheet4U.com Schottky Barrier Diodes (SBD) MA2SD30 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features • Small reverse current: IR < 2 µA (at VR = 30 V) • Optimum for high frequency rectification because of its short reverse recovery time trr . 0.80±0.05 0.60+0.05 –0.03 0.80+0.05 –0.03 1 (0.60) 0.12+0.05 –0.02 (0.80).

Features

• Small reverse current: IR < 2 µA (at VR = 30 V)
• Optimum for high frequency rectification because of its short reverse recovery time trr . 0.80±0.05 0.60+0.05
  –0.03 0.80+0.05
  –0.03 1 (0.60) 0.12+0.05
  –0.02 (0.80) (0.60) 0.01±0.01 5˚ 2 0.30±0.05
■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current
* 0+0
  –0.05 5˚ Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg Rating 30 30 100 200 1 125 −55 to +125 Unit V (0.15) V mA mA A °C °C 0.01±0.01 1: Anode 2: Cathode .