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MA2SD10 |
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| Part Number | MA2SD10 |
| Manufacturer | Panasonic |
| Description | Schottky Barrier Diodes (SBD) MA2SD10 Silicon epitaxial planar type 0.30 ± 0.05 For super-high speed switching circuit I Features • • • • Sealed in the super small SS-mini type 2-pin package Allowin... |
| Features |
• • • • Sealed in the super small SS-mini type 2-pin package Allowing to rectify under (IF(AV) = 200 mA) condition Low forward rise voltage VF Allowing high-density mounting 0.80 0.80 ± 0.05 Unit : mm 2 1 0.60 0.60 0.12 − 0.02 + 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non-repetitive peak forward surge current* Peak forward current Average forward current Junction temperature Storage temperature Symbol VR VRRM IFSM IFM IF(AV) Tj Tstg Rating 20 20 1 300 200 125 −55 to + 125 Unit V V A mA mA °C °C 1.20 − 0.03 + 0.05 1.6... |
| Document |
 MA2SD10 Data Sheet
PDF 38.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MA2SD19 |
Panasonic |
Silicon epitaxial planar type |
|
| 2 | MA2SD032 |
Panasonic |
Schottky Barrier Diodes (SBD) Silicon epitaxial planar type |
|
| 3 | MA2SD24 |
Panasonic |
Silicon epitaxial planar type |
|
| 4 | MA2SD25 |
Panasonic Semiconductor |
Silicon epitaxial planar type |
|
| 5 | MA2SD29 |
Panasonic Semiconductor |
Silicon epitaxial planar type |
|