MA2SD25 - Panasonic Semiconductor

MA2SD25 Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) MA2SD25 Silicon epitaxial planar type Unit: mm For super high speed switching 0.80+0.05 –0.03 0.80±0.05 0.60+0.05 –0.03 0.12+0.05 –0.02 (0.80) (0.60) 0.01±0.01 5° I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Peak forward current Average forward current Non-repetitive .

Features

1 Publication date: August 2001 SKH00029AED 1 MA2SD25 IF  V F 103 Ta = 125°C 102 104 75°C 25°C −20°C 105 IR  V R 40 35 Ct  VR Ta = 25°C Forward current IF (mA) Reverse current IR (µA) Ta = 125°C 103 75°C 10 2 Terminal capacitance Ct (pF) 20 30 25 20 15 10 5 10 1 25°C 10 10−1 10−2 1 10−3 10−1 0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 0 0 5 10 15 20 Forward voltage VF (V) Reverse voltage VR (V) Reverse voltage VR (V) www.DataSheet4U.com 2 SKH00029AED Request for your special attention and precautions in using the technical information and semiconductors described in.