Schottky Barrier Diodes (SBD)) MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.80+0.05 –0.03 0.80±0.05 0.60+0.05 –0.03 0.12+0.05 –0.02 (0.80) 2 0.30±0.05 5˚ 5˚ • Forward current (Average) IF(AV) = 200 mA rectification is possible • Low forward voltage: VF < 0.47 V • Small reverse current: IR < 20 µA (0.60) ■ Features .
1
(0.60)
0.01±0.01
0+0
–0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Non-repetitive peak forward surge current
* Peak forward current Forward current (Average) Junction temperature Storage temperature Symbol VR VRRM IFSM IFM IF(AV) Tj Tstg Rating 20 20 1 300 200 125 −55 to +125 Unit
0.01±0.01
V V A mA mA °C °C
1 : Anode 2 : Cathode EIAJ : SC-79
SSMini2-F1 Package
Marking Symbol: 3L
Note)
*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Forward voltag.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA2SD10 |
Panasonic |
Silicon epitaxial planar type | |
2 | MA2SD032 |
Panasonic |
Schottky Barrier Diodes (SBD) Silicon epitaxial planar type | |
3 | MA2SD24 |
Panasonic |
Silicon epitaxial planar type | |
4 | MA2SD25 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
5 | MA2SD29 |
Panasonic Semiconductor |
Silicon epitaxial planar type | |
6 | MA2SD30 |
Panasonic Semiconductor |
Schottky Barrier Diodes | |
7 | MA2SD31 |
Panasonic Semiconductor |
Schottky Barrier Diodes | |
8 | MA2SD32 |
Panasonic Semiconductor |
Schottky Barrier Diodes | |
9 | MA2S077 |
Panasonic |
Silicon epitaxial planar type | |
10 | MA2S111 |
Panasonic |
Silicon epitaxial planar type | |
11 | MA2S304 |
Panasonic |
Silicon epitaxial planar type | |
12 | MA2S331 |
Panasonic |
Silicon epitaxial planar type |