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MA2SD19 - Panasonic

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MA2SD19 Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)) MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.80+0.05 –0.03 0.80±0.05 0.60+0.05 –0.03 0.12+0.05 –0.02 (0.80) 2 0.30±0.05 5˚ 5˚ • Forward current (Average) IF(AV) = 200 mA rectification is possible • Low forward voltage: VF < 0.47 V • Small reverse current: IR < 20 µA (0.60) ■ Features .

Features

1 (0.60) 0.01±0.01 0+0
  –0.05
■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Non-repetitive peak forward surge current
* Peak forward current Forward current (Average) Junction temperature Storage temperature Symbol VR VRRM IFSM IFM IF(AV) Tj Tstg Rating 20 20 1 300 200 125 −55 to +125 Unit 0.01±0.01 V V A mA mA °C °C 1 : Anode 2 : Cathode EIAJ : SC-79 SSMini2-F1 Package Marking Symbol: 3L Note)
*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Forward voltag.

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