MA2S077 - Panasonic

MA2S077 Silicon epitaxial planar type

Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit : mm For band switching 0.15 min. 0.15 min. I Features • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.27 − 0.02 0.8 ± 0.1 + 0.05 1.3 ± 0.1 1.7.

Features

• Low forward dynamic resistance rf
• Less voltage dependence of diode capacitance CD
• SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.27 − 0.02 0.8 ± 0.1 + 0.05 1.3 ± 0.1 1.7 ± 0.1 Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature
* Storage temperature Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +150 Unit V mA °C °C 0.7 ± 0.1 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Note)
* : Maximum ambient temperature during operation Marking Symbol: S I Electrical Characteristics Ta = .