KSC3503 - ON Semiconductor

KSC3503 NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor KSC3503 Features • High Voltage: VCEO = 300 V • Low Reverse Transfer Capacitance: Cre = 1.8 pF at VCB = 30 V • Excellent Gain Linearity for Low THD • High Frequency: 150 MHz • Full Thermal and Electrical Spice Models are Available • Complement to KSA1381 • These Devices are Pb−Free and are RoHS Compliant Applications • Audio.

Features

• High Voltage: VCEO = 300 V
• Low Reverse Transfer Capacitance: Cre = 1.8 pF at VCB = 30 V
• Excellent Gain Linearity for Low THD
• High Frequency: 150 MHz
• Full Thermal and Electrical Spice Models are Available
• Complement to KSA1381
• These Devices are Pb−Free and are RoHS Compliant Applications
• Audio, Voltage Amplifier and Current Source
• CRT Display, Video Output
• General Purpose Amplifier ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Ratings Units Collector−Base Voltage BVCBO 300 V Collector−Emitter Voltage BVCEO 300 V Emitter−Base Voltag.