KSC3552 - Fairchild Semiconductor

KSC3552 NPN Epitaxial Silicon Transistor

KSC3552 KSC3552 High Voltage and High Reliabilty • High Speed Switching • Wide SOA 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector .

Features

dwidth Product Turn ON Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 6A, IB1 = -IB2 = 1.2A L = 500µH, Clamped VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.8A VCE = 5V, IC = 4A IC = 6A, IB = 1.2A IC = 6A, IB = 1.2A VCB = 10V, f = 1MHz VCE = 10V, IC = 0.8A VCC = 400V 51B1 = -2.5I B2 = IC = 8A RL = 50Ω 215 15 0.5 3 0.3 10 8 Min. 1100 800 7 800 10 10 40 2 1.5 V V pF MHz µs µs µs Typ. Max. Units V V V V µA µA hFE Classificntion Classification hFE N 10 ~ 20 R 15 ~ 30 O 20 ~ 40 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001.