KSC3073 - Fairchild Semiconductor

KSC3073 NPN Epitaxial Silicon Transistor

KSC3073 KSC3073 Power Amplifier Application • Complement to KSA1243 1 I-PAK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collecto.

Features

.5A VCE = 2V, IC = 2.5A IC = 2A, IB = 0.2A VCE = 2V,IC = 0.5A VCE = 2V, IC = 0.5A VCB = 10V, f =1MHz 70 25 0.3 0.75 100 35 Min. 30 5 1 1 240 0.8 1 V V MHz pF Typ. Max. Units V V µA µA hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 ©2002 Fairchild Semiconductor Corporation Rev. B, September 2002 KSC3073 Typical Characteristics 4.0 1000 3.5 IC[A], COLLECTOR CURRENT 2.5 IB= 20m A hFE, DC CURRENT GAIN 3.0 IB =4 0m A 3 A 0m 100 VCE = 2V I B= 2.0 mA I B = 15 1.5 I B = 10mA 10 1.0 IB = 5mA 0.5 0.0 0.0 IB = 3mA IB = 0 0.8 1.6 2.4 3.2 4.0 4.8 5.6 6.4 1 1E-3.