KSC3076 - Fairchild Semiconductor

KSC3076 NPN Epitaxial Silicon Transistor

KSC3076 KSC3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage • Complement to KSA 1241 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Bas.

Features

CB = 50V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC= 0.5A VCE = 2V, IC = 1.5A IC = 1A, IB = 0.05A IC = 1A, IB = 0.05A VCE = 2V, IC = 0.5A VCB = 10V, f = 1MHz VCC = 30V, IC = 1A 1B1 = - I B2 = 0.05A RL = 30Ω 100 30 0.1 1 0.1 70 40 Min. 50 Typ. Max. 1 1 240 0.5 1.2 V V MHz pF µs µs µs Units V µA µA hFE1 Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC3076 Package Demensions I-PAK 6.60 ±0.20 5.34 ±0.20 (0.50) (4.34) (0.50) 0.50 ±0.10 2.30 ±0.20 ±0.20 ±0.20 0.60 0.70 ±0.10 6.10 ±0.20 0.80 ±0.20 1.80 MAX0.96 .