KSC3569 - Fairchild Semiconductor

KSC3569 NPN Epitaxial Silicon Transistor

KSC3569 KSC3569 High Speed Switching Application • Low Collector Saturation Voltage • Specified of Reverse Biased SOA With Inductive Loads 1 TO-220F 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Vo.

Features

Cut-off Current Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition IC = 0.5A, IB1 = 0.1A, L = 1mH IC = 0.5A, IB1 = -IB2 = 0.1A Ta= 125°C, L = 180µH, Clamped IC = 1A, IB1 = -IB2 = 0.2A, Ta= 125°C, L = 180µH, Clamped VCB = 400V, IE = 0 VCE = 400V, RBE = 51Ω @ TC = 125°C VCE = 400V, VBE (off) = -5V VCE = 400V, VBE (off) = -5V @ TC= 125°C VBE = 5V, IC = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.5A IC = 0.5A, IB = 0.1A IC = 0.5A, IB = 0.1A VCC = 150V, IC = 0.5A IB1 = -IB2 = 0.1A RL = 300.