KSC3074 - Fairchild Semiconductor

KSC3074 NPN Epitaxial Silicon Transistor

KSC3074 KSC3074 High Power Switching • Complement to KSA1244 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector D.

Features

VCE = 1V, IC = 3A IC= 3A, IB = 0.15A IC= 3A, IB = 0.15A VCE = 4V, IC = 1A VCB = 10V, f = 1MHz VCC = 30V, IC= 3A IB1= - I B2=0.15A RL = 10Ω 0.9 120 80 0.1 1 0.1 70 30 Min. 50 Typ. Max. 1 1 240 0.5 1.2 V V MHz pF µs µs µs Units V µA µA hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC3074 Typical Characteristics 8 7 IC[A], COLLECTOR CURRENT 1 I B= m 00 A IB= 90m A IB = 80mA IB = 70mA IB = 60mA 1000 VCE = 1V hFE, DC CURRENT GAIN 8 6 IB = 50mA IB = 40mA IB = 30mA IB = 20mA 100 5 4 3 10 2 IB .