KSC3114 KSC3114 Audio Frequency Amplifier High Frequency OSC. • High Current Gain : hFE=280~560 • Collector-Base Voltage : VCBO=60V • High Current Gain Bandwidth Product : fT=300MHz (TYP) 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Par.
µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=40V, IE=0 VEB=3V, IC=0 VCE=6V, IC=1.0mA IC=100mA, IB=10mA VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz VCE=6V, IC=0.5mA f=1KHz, RS=500Ω 280 0.15 300 2.5 4.0 Min. 60 50 12 0.1 0.1 560 0.3 V MHz pF dB Typ. Max. Units V V V µA µA
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC3114
Package Dimensions
TO-92
4.58
–0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38
–0.05
+0.10
3.86MAX
1.02 ±0.10
0.38
–0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semicon.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSC3120 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
2 | KSC3125 |
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NPN Epitaxial Silicon Transistor | |
3 | KSC3073 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
4 | KSC3074 |
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NPN Epitaxial Silicon Transistor | |
5 | KSC3076 |
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NPN Epitaxial Silicon Transistor | |
6 | KSC321 |
ITT Industries |
(KSC Series) Tact Switch | |
7 | KSC321J |
ITT Industries |
(KSC Series) Sealed Tact Switch | |
8 | KSC3233 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
9 | KSC3265 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
10 | KSC3265 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
11 | KSC3265 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
12 | KSC3296 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |