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KSC3503 |
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| Part Number | KSC3503 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage ·High breakdown voltage ·Silicon NPN epitaxial planar transistor ·Small reverse transfer capacitance and excellent high frequency characteristic ·100% avalanche teste... |
| Features |
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC=20mA; IB= 2mA
VBE(sat) Base-Emitter Saturation Voltage
IC=20mA; IB= 2mA
ICBO
Collector Cutoff Current
VCB= 300V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 10mA ; VCE= 10V
fT
Current-Gain—Bandwidth Product
IE= -10mA; VCE= 30V
KSC3503
MIN TYP. MAX UNIT
300
V
300
V
5
V
0.6
V
1.0
V
1.0 μA
1.0 μA
40
320
150
MHz
hFE Classifications C D E F 40-80 60-120 100-200 ... |
| Document |
 KSC3503 Data Sheet
PDF 193.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KSC3502 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 2 | KSC3503 |
ON Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 3 | KSC3503 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 4 | KSC351 |
ITT Industries |
(KSC Series) Tact Switch |
|
| 5 | KSC351J |
ITT Industries |
(KSC Series) Sealed Tact Switch |
|