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TrenchMVTM Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated IXTC200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient Maximum Ratings 100 100 ± 30 V V V TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse.
Silicon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary - Side Switch High Current Switching Applications © 2008 IXYS CORPORATION, All rights reserved DS99653A(10/08) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs VDS = 10V, ID = 60A, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VG.
IXTC200N10T - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.3mΩ@VGS=10V ·100% avalanche t.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTC200N075T |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IXTC200N085T |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTC200N085T |
IXYS Corporation |
Power MOSFET |
|
| 4 | IXTC220N055T |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTC220N075T |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IXTC220N075T |
IXYS Corporation |
Power MOSFET |
|
| 7 | IXTC240N055T |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IXTC240N055T |
IXYS Corporation |
Power MOSFET |
|
| 9 | IXTC250N075T |
IXYS Corporation |
Power MOSFET |
|
| 10 | IXTC26N50P |
IXYS Corporation |
PolarHV Power MOSFET |
|
| 11 | IXTC26N50P |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IXTC280N055T |
IXYS Corporation |
Power MOSFET |
|