IXTC240N055T - IXYS Corporation

IXTC240N055T Power MOSFET

Preliminary Technical Information TrenchMVTM IXTC240N055T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 132 4.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°.

Features

Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 1 mA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 50 A, Note 1 Characteristic Values Min. Typ. Max. 55 V 2.0 4.0 V ± 200 nA 5 μA 250 μA 4.0 mΩ Applications Automotive - Motor Drives - High Side Switch - 12V Battery -.