Advanced Technical Information PolarHVTM Power MOSFET Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated IXTC 26N50P VDSS = 500 V = 13 A ID25 RDS(on) = 260 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC.
z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) Applications z DC-DC converters z z z z ISOPLUS220TM (IXTC) E153432 G D S Isolated Tab G = Gate S = Source D = Drain 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1, leads-to-tab Mounting Force 300 2500 11..65/2.5..15 2 Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS .
isc N-Channel MOSFET Transistor IXTC26N50P ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTC200N075T |
INCHANGE |
N-Channel MOSFET | |
2 | IXTC200N085T |
INCHANGE |
N-Channel MOSFET | |
3 | IXTC200N085T |
IXYS Corporation |
Power MOSFET | |
4 | IXTC200N10T |
INCHANGE |
N-Channel MOSFET | |
5 | IXTC200N10T |
IXYS Corporation |
Power MOSFET | |
6 | IXTC220N055T |
INCHANGE |
N-Channel MOSFET | |
7 | IXTC220N075T |
INCHANGE |
N-Channel MOSFET | |
8 | IXTC220N075T |
IXYS Corporation |
Power MOSFET | |
9 | IXTC240N055T |
INCHANGE |
N-Channel MOSFET | |
10 | IXTC240N055T |
IXYS Corporation |
Power MOSFET | |
11 | IXTC250N075T |
IXYS Corporation |
Power MOSFET | |
12 | IXTC280N055T |
IXYS Corporation |
Power MOSFET |