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IXTC200N10T |
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| Part Number | IXTC200N10T |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.3mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable ... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 6.3mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 101 IDM Drain Current-Single Pulsed 500 PD Total Dissipation @TC=25℃ 160 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTIC... |
| Document |
 IXTC200N10T Data Sheet
PDF 246.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTC200N10T |
IXYS Corporation |
Power MOSFET |
|
| 2 | IXTC200N075T |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTC200N085T |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTC200N085T |
IXYS Corporation |
Power MOSFET |
|
| 5 | IXTC220N055T |
INCHANGE |
N-Channel MOSFET |
|