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Preliminary Technical Information TrenchMVTM IXTC220N075T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 115 5.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to .
Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99636 (11/06) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS IXTC220N075T Test Conditions Characteristic Values (TJ = 25°C unless ot.
IXTC220N075T - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.5mΩ@VGS=10V ·Fully characteri.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTC220N055T |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IXTC200N075T |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTC200N085T |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTC200N085T |
IXYS Corporation |
Power MOSFET |
|
| 5 | IXTC200N10T |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IXTC200N10T |
IXYS Corporation |
Power MOSFET |
|
| 7 | IXTC240N055T |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IXTC240N055T |
IXYS Corporation |
Power MOSFET |
|
| 9 | IXTC250N075T |
IXYS Corporation |
Power MOSFET |
|
| 10 | IXTC26N50P |
IXYS Corporation |
PolarHV Power MOSFET |
|
| 11 | IXTC26N50P |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IXTC280N055T |
IXYS Corporation |
Power MOSFET |
|