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Preliminary Technical Information TrenchMVTM IXTC200N085T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = RDS(on) ≤ 85 110 5.5 V A mΩ Symbol VDSS VDGR VGSM ID25 I LRMS IDM IAR EAS dv/dt P D TJ TJM Tstg TL T SOLD V ISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1.
Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2007 IXYS CORPORATION All rights reserved DS99644 (02/07) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Q g(on) Q gs Q gd RthJC RthCS IXTC200N085T Test Conditions Characteristic Values (TJ = 25°C unless ot.
IXTC200N085T - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·100% avalanche t.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTC200N075T |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IXTC200N10T |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTC200N10T |
IXYS Corporation |
Power MOSFET |
|
| 4 | IXTC220N055T |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTC220N075T |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IXTC220N075T |
IXYS Corporation |
Power MOSFET |
|
| 7 | IXTC240N055T |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IXTC240N055T |
IXYS Corporation |
Power MOSFET |
|
| 9 | IXTC250N075T |
IXYS Corporation |
Power MOSFET |
|
| 10 | IXTC26N50P |
IXYS Corporation |
PolarHV Power MOSFET |
|
| 11 | IXTC26N50P |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IXTC280N055T |
IXYS Corporation |
Power MOSFET |
|