isc N-Channel MOSFET Transistor IXTC220N055T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIM.
·Static drain-source on-resistance:
RDS(on) ≤ 4.0mΩ@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converters
·High Current Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
55
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
220
IDM
Drain Current-Single Pulsed
600
PD
Total Dissipation @TC=25℃
430
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~17.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTC220N075T |
INCHANGE |
N-Channel MOSFET | |
2 | IXTC220N075T |
IXYS Corporation |
Power MOSFET | |
3 | IXTC200N075T |
INCHANGE |
N-Channel MOSFET | |
4 | IXTC200N085T |
INCHANGE |
N-Channel MOSFET | |
5 | IXTC200N085T |
IXYS Corporation |
Power MOSFET | |
6 | IXTC200N10T |
INCHANGE |
N-Channel MOSFET | |
7 | IXTC200N10T |
IXYS Corporation |
Power MOSFET | |
8 | IXTC240N055T |
INCHANGE |
N-Channel MOSFET | |
9 | IXTC240N055T |
IXYS Corporation |
Power MOSFET | |
10 | IXTC250N075T |
IXYS Corporation |
Power MOSFET | |
11 | IXTC26N50P |
IXYS Corporation |
PolarHV Power MOSFET | |
12 | IXTC26N50P |
INCHANGE |
N-Channel MOSFET |