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IXTC200N10T |
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| Part Number | IXTC200N10T |
| Manufacturer | IXYS Corporation |
| Description | TrenchMVTM Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated IXTC200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL VISOL Md Weight Tes... |
| Features |
Silicon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation
Advantages
Easy to mount Space savings High power density
Applications
Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary - Side Switch High Current Switching Applications
© 2008 IXYS CORPORATION, All rights reserved
DS99653A(10/08)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs VDS = 10V, ID = 60A, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on) tr td(off) tf
Resistive Switching Times
VG... |
| Document |
 IXTC200N10T Data Sheet
PDF 179.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTC200N10T |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IXTC200N075T |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTC200N085T |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTC200N085T |
IXYS Corporation |
Power MOSFET |
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| 5 | IXTC220N055T |
INCHANGE |
N-Channel MOSFET |
|