Preliminary Data Sheet Low VCE(sat) IGBT Short Circuit SOA Capability IXSA 16N60 IXSP 16N60 V CES = 600V I C25 = 16A VCE(sat)typ = 1.8V Symbol www.DataSheet4U.com V CES Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, TJ = 125°C, RG = 150 Ω Clamped inductive load,.
l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s International standard package Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses l High current handling capability l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 3.5 TJ = 25°C TJ = 125°C 6.5 200 1 ± 100 1.8 2.3 V V µA mA nA V MOS Gate turn-on - drive simplicity l Fast fall time for switching speeds up to 20 kHz Applications l l l BVCES VGE(th) ICES I GES VCE(sa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXSA10N60B2D1 |
IXYS Corporation |
High Speed IGBT | |
2 | IXSA15N120B |
IXYS Corporation |
High Voltage IGBT | |
3 | IXSA20N60B2D1 |
IXYS Corporation |
High Speed IGBT | |
4 | IXSH10N60B2D1 |
IXYS |
High-Speed IGBT | |
5 | IXSH15N120A |
IXYS Corporation |
IGBT | |
6 | IXSH15N120AU1 |
IXYS Corporation |
IGBT | |
7 | IXSH15N120B |
IXYS |
High-Voltage IGBT | |
8 | IXSH15N120BD1 |
IXYS Corporation |
Improved SCSOA Capability | |
9 | IXSH16N60U1 |
IXYS |
IGBT | |
10 | IXSH20N60 |
IXYS |
High Speed IGBT | |
11 | IXSH20N60A |
IXYS |
High Speed IGBT | |
12 | IXSH20N60B2D1 |
IXYS |
High Speed IGBT |