IXSH15N120BD1 - IXYS Corporation

IXSH15N120BD1 Improved SCSOA Capability

IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V HIGH Voltage IGBT with Diode Preliminary data www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Cl.

Features

• High Blocking Voltage
• Epitaxial Silicon drift region - fast switching - small tail current - low switching losses
• MOS gate turn-on for drive simplicity
• Molding epoxies meet UL 94 V-0 flammability classification Applications Mounting torque (TO-247) 1.13/10 Nm/lb.in. 300 260 6 4 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering (TO-268) Weight TO-247 TO-268 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 3 TJ = 125°C 6 50 2.5 ±100 TJ = 125°C 3.0 2.8 3.4 V V mA.