www.DataSheet4U.com High Speed IGBT Short Circuit SOA Capability Preliminary Data Sheet IXSH 20N60B2D1 VCES = 600 V I C25 = 35 A V CE(sat) = 2.5 V D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for sold.
µs W °C °C °C g °C °C
• International standard package
• Guaranteed Short Circuit SOA capability
• Low VCE(sat) - for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on - drive simplicity
• Fast fall time for switching speeds up to 20 kHz Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding Advantages
• High power density
G
TO-247 (IXSH)
C
E
G = Gate E = Emitter
C = Collector TAB = Collector
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 3.5 TJ = 125°C 6.5 85 0.6 ± 100 2.5 V V µA mA nA V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXSH20N60 |
IXYS |
High Speed IGBT | |
2 | IXSH20N60A |
IXYS |
High Speed IGBT | |
3 | IXSH24N60 |
IXYS |
IGBT | |
4 | IXSH24N60A |
IXYS |
IGBT | |
5 | IXSH24N60AU1 |
IXYS Corporation |
HiPerFASTTM IGBT with Diode | |
6 | IXSH24N60B |
IXYS |
High Speed IGBT | |
7 | IXSH24N60BD1 |
IXYS |
High Speed IGBT | |
8 | IXSH24N60U1 |
IXYS Corporation |
HiPerFASTTM IGBT with Diode | |
9 | IXSH25N100 |
IXYS Corporation |
Low VCE(sat) IGBT | |
10 | IXSH25N100A |
IXYS Corporation |
Low VCE(sat) IGBT | |
11 | IXSH25N120A |
IXYS Corporation |
IGBT | |
12 | IXSH10N60B2D1 |
IXYS |
High-Speed IGBT |