Advance Technical Information HIGH Voltage IGBT IXSA 15N120B IXSP 15N120B "S" Series - Improved SCSOA Capability VCES IC25 VCE(sat) =1200 V = 30 A = 3.4 V Symbol www.DataSheet4U.com V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TJ = 125°C, RG = 10 Ω Clamped i.
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering Weight (TO-263) TO-220 TO-263
• International
260 4 2
• Low switching losses, low V
• MOS Gate turn-on
- drive simplicity Applications
standard packages JEDEC TO-220AB and TO-263AA
(sat)
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IC = 250 µA, VGE = 0 V IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V IGES VCE(sat) VCE = 0 V, VGE = ±20 V IC = ICE90, VGE = 15
Min. 1200 3 TJ = 25°C TJ = 125°C
Characteristic Values Typ. Max. V 6 50 2.5 ± 100 V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXSA10N60B2D1 |
IXYS Corporation |
High Speed IGBT | |
2 | IXSA16N60 |
IXYS Corporation |
Short Circuit SOA Capability | |
3 | IXSA20N60B2D1 |
IXYS Corporation |
High Speed IGBT | |
4 | IXSH10N60B2D1 |
IXYS |
High-Speed IGBT | |
5 | IXSH15N120A |
IXYS Corporation |
IGBT | |
6 | IXSH15N120AU1 |
IXYS Corporation |
IGBT | |
7 | IXSH15N120B |
IXYS |
High-Voltage IGBT | |
8 | IXSH15N120BD1 |
IXYS Corporation |
Improved SCSOA Capability | |
9 | IXSH16N60U1 |
IXYS |
IGBT | |
10 | IXSH20N60 |
IXYS |
High Speed IGBT | |
11 | IXSH20N60A |
IXYS |
High Speed IGBT | |
12 | IXSH20N60B2D1 |
IXYS |
High Speed IGBT |