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High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet www.DataSheet4U.com IXSA 10N60B2D1 IXSP 10N60B2D1 VCES = 600 V = 20 A I C25 V CE(sat) = 2.5 V D1 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load, .
• International standard packages
• Guaranteed Short Circuit SOA capability
• Low VCE(sat) - for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on - drive simplicity
• Fast fall time for switching speeds up to 20 kHz Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding Advantages
• High power density
G C E C (TAB) G E C (TAB)
Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg
TO-263 (IXSA)
TO-220AB (IXSP)
G = Gate E = Emitter
C = Collector TAB = Collector
Maximum lead temperature f.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXSA15N120B |
IXYS Corporation |
High Voltage IGBT |
|
| 2 | IXSA16N60 |
IXYS Corporation |
Short Circuit SOA Capability |
|
| 3 | IXSA20N60B2D1 |
IXYS Corporation |
High Speed IGBT |
|
| 4 | IXSH10N60B2D1 |
IXYS |
High-Speed IGBT |
|
| 5 | IXSH15N120A |
IXYS Corporation |
IGBT |
|
| 6 | IXSH15N120AU1 |
IXYS Corporation |
IGBT |
|
| 7 | IXSH15N120B |
IXYS |
High-Voltage IGBT |
|
| 8 | IXSH15N120BD1 |
IXYS Corporation |
Improved SCSOA Capability |
|
| 9 | IXSH16N60U1 |
IXYS |
IGBT |
|
| 10 | IXSH20N60 |
IXYS |
High Speed IGBT |
|
| 11 | IXSH20N60A |
IXYS |
High Speed IGBT |
|
| 12 | IXSH20N60B2D1 |
IXYS |
High Speed IGBT |
|