IXSH15N120AU1 - IXYS Corporation

IXSH15N120AU1 IGBT

IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode "S" Series - Improved SCSOA Capability C G E Symbol www.DataSheet4U.com IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82 Ω Clamped inductive load, L .

Features

• High frequency IGBT with guaranteed Short Circuit SOA capability.
• IGBT with anti-parallel diode in one package
• 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses
• MOS Gate turn-on - drive simplicity Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• DC choppers Advantages
• Saves space (two devices in one package)
• Easy to mount (isolated mounting hole)
• Reduces assembly time and cost
• Operates cooler
• Easier to assemble Mounting torque . 1.15/.