IXSH10N60B2D1 - IXYS

IXSH10N60B2D1 High-Speed IGBT

www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 10N60B2D1 IXSQ 10N60B2D1 VCES = 600 V I C25 = 20 A V CE(sat) = 2.5 V D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Mounting torque TO-247 TO-3P TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82Ω Cl.

Features

• International standard package
• Guaranteed Short Circuit SOA capability
• Low VCE(sat) - for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on - drive simplicity
• Fast fall time for switching speeds up to 20 kHz Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding Advantages
• High power density BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA, VGE = 0 V = 750 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ± 20 V IC = 10A, VGE = 15 V DS99236(10/04) © 2004 IXYS All rights reserved IXSH 10N60B2D1 www.DataSheet4U.c.