IXSH16N60U1 - IXYS

IXSH16N60U1 IGBT

Low VCE(sat) IGBT with Diode Short Circuit SOA Capability Preliminary data IXSH 16N60U1 VCES IC25 VCE(sat)typ = 600V = 16A = 1.8V Symbol Test Conditions VCES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms V= GE 15 V, T J = 125°C, R G = 150 .

Features

• Latest generation HDMOSTM process
• International standard package
• Guaranteed Short Circuit SOA capability
• Low VCE(sat) - for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on - drive simplicity
• Fast fall time for switching speeds up to 20 kHz Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding Advantages
• High power density IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 98532 (7/98) 1-2 IXSH 16N60U1 Symbol gfs IC(on) Cies C oes Cres Qg Qge Q gc td(on) .