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IXGT30N120B3D1 |
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| Part Number | IXGT30N120B3D1 |
| Manufacturer | IXYS Corporation |
| Description | GenX3TM 1200V IGBT High speed Low Vsat PT IGBTs 3-20 kHz switching IXGH30N120B3D1 IXGT30N120B3D1 VCES IC110 VCE(sat) tfi(typ) = 1200V = 30A ≤£ 3.5V = 204ns Symbol VCES VCGR VGES VGEM IC110 IF110 I... |
| Features |
z Optimized for low conduction and switching losses
z Square RBSOA z Anti-parallel ultra fast diode z International standard packages
Advantages
z High power density z Low gate drive requirement
Applications
z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Welding Machines
© 2008 IXYS CORPORATION, All rights reserved
DS99566A(05/08)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs IC = 30A, VCE = 10V, Note 1
Cies Coes Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg Qge IC = 30A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) tfi Eoff Inductive load, TJ ... |
| Document |
 IXGT30N120B3D1 Data Sheet
PDF 209.87KB |
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