IXFN120N20 - ETC

IXFN120N20 HiPer FET Power MOSFETs

HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = .

Features

• Encapsulating epoxy meets UL 94 V-0, flammability classification
• International standard package
• miniBLOC, with Aluminium nitride isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier Applications Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 V 4 V ±200 nA TJ = 25°C TJ = 125°C 100 mA 2 mA 17 mW
• DC-DC converters
• Batter.