IXFN120N20P - IXYS

IXFN120N20P PolarHT Power MOSFET

Advanced Technical Information PolarHT Power MOSFET TM IXFN 120N20P N-Channel Enhancement Mode VDSS = 200 V ID25 = 120 A RDS(on) ≤ 22 mΩ ≤ 220 ns trr www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient T.

Features

W °C °C °C °C V~ z z z z z 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, t = 1 minute Mounting torque Terminal connection torque 300 2500 1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. 30 g International standard package Unclamped Inductive Switching (UIS) rated Low terminal inductance lOW Stray capacitance to heatsink (<35pF) Molding compound meets UL 94 V-O flammability classification Advantages z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175°C Ch.