www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS(on) 23 mW 23 mW 20 mW 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns TO-264 AA TO-264 AA (IXFK) Maximum Ratings IXFK IXFN IXFN 90N20 100N20 106N20 200 200 200 V 200 ±.
International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier l q q q q q q q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ±200 TJ = 25°C TJ = 125°C IXFK90N20 IXFN100N20 IXFN106N20 400 2 0.023 0.023 0.020 V V nA mA mA W W W VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 8 m.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFN100N10S1 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
2 | IXFN100N10S2 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
3 | IXFN100N10S3 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
4 | IXFN100N20 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
5 | IXFN100N25 |
IXYS Corporation |
N-Channel MOSFET | |
6 | IXFN100N50P |
IXYS Corporation |
Power MOSFET | |
7 | IXFN100N50Q3 |
IXYS Corporation |
HiperFET Power MOSFET Q3-Class | |
8 | IXFN100N65X2 |
IXYS |
Power MOSFET | |
9 | IXFN102N30P |
IXYS Corporation |
Polar MOSFETs | |
10 | IXFN110N60P3 |
IXYS Corporation |
Polar3 HiPerFET Power MOSFET | |
11 | IXFN110N85X |
IXYS |
Power MOSFET | |
12 | IXFN120N20 |
ETC |
HiPer FET Power MOSFETs |