IXFN120N20 |
Part Number | IXFN120N20 |
Manufacturer | ETC |
Description | HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL... |
Features |
• Encapsulating epoxy meets UL 94 V-0, flammability classification • International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 V 4 V ±200 nA TJ = 25°C TJ = 125°C 100 mA 2 mA 17 mW • DC-DC converters • Batter... |
Document |
IXFN120N20 Data Sheet
PDF 69.86KB |
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