IXFN100N65X2 - IXYS

IXFN100N65X2 Power MOSFET

X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN100N65X2 D G S S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = .

Features

 International Standard Package
 miniBLOC, with Aluminium Nitride Isolation
 Isolation Voltage 2500V~
 High Current Handling Capability
 Fast Intrinsic Diode
 Avalanche Rated
 Low RDS(on) Advantages
 High Power Density
 Easy to Mount
 Space Savings Applications
 Switch-Mode and Resonant-Mode Power Supplies
 DC-DC Converters
 PFC Circuits
 AC and DC Motor Drives
 Robotics and Servo Controls © 2016 IXYS CORPORATION, All Rights Reserved DS100707A(03/16) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 50A, Note 1 RGi Gate Input Resistance.