Advance Technical Information HiperFETTM Power MOSFET Q3-Class N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN100N50Q3 VDSS ID25 RDS(on) trr = = ≤ ≤ 500V 82A 49mΩ 250ns miniBLOC E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Mounting Torque for Base Plate .
z z z S G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. z z z International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z z z High Power Density Easy to Mount Space Savings Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 50A, Note 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFN100N50P |
IXYS Corporation |
Power MOSFET | |
2 | IXFN100N10S1 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
3 | IXFN100N10S2 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
4 | IXFN100N10S3 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
5 | IXFN100N20 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
6 | IXFN100N25 |
IXYS Corporation |
N-Channel MOSFET | |
7 | IXFN100N65X2 |
IXYS |
Power MOSFET | |
8 | IXFN102N30P |
IXYS Corporation |
Polar MOSFETs | |
9 | IXFN106N20 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
10 | IXFN110N60P3 |
IXYS Corporation |
Polar3 HiPerFET Power MOSFET | |
11 | IXFN110N85X |
IXYS |
Power MOSFET | |
12 | IXFN120N20 |
ETC |
HiPer FET Power MOSFETs |