IXFN120N65X2 - IXYS

IXFN120N65X2 Power MOSFET

Preliminary Technical Information X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN120N65X2 D G S S VDSS = ID25 = RDS(on)  650V 108A 24m miniBLOC, SOT-227 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C .

Features

 International Standard Package
 miniBLOC, with Aluminium Nitride Isolation
 Isolation Voltage 2500 V~
 High Current Handling Capability
 Fast Intrinsic Diode
 Avalanche Rated
 Low RDS(on) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 650 V 3.5 5.0 V 100 nA 50 A 5 mA 24 m Advantages
 High Power Density
 Easy to Mount
 Space Savings Applications
 .