Advanced Technical Information www.DataSheet4U.com PolarHTTM HiPerFET IXFK 102N30P IXFN 102N30P Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode VDSS ID25 RDS(on) trr = = = ≤ 300 V 102 A 33 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C.
z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±200 25 250 33 V V nA µA µA mΩ z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density © 2005 IXYS All rights reserved DS99221A(02/05) I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFN100N10S1 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
2 | IXFN100N10S2 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
3 | IXFN100N10S3 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
4 | IXFN100N20 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
5 | IXFN100N25 |
IXYS Corporation |
N-Channel MOSFET | |
6 | IXFN100N50P |
IXYS Corporation |
Power MOSFET | |
7 | IXFN100N50Q3 |
IXYS Corporation |
HiperFET Power MOSFET Q3-Class | |
8 | IXFN100N65X2 |
IXYS |
Power MOSFET | |
9 | IXFN106N20 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
10 | IXFN110N60P3 |
IXYS Corporation |
Polar3 HiPerFET Power MOSFET | |
11 | IXFN110N85X |
IXYS |
Power MOSFET | |
12 | IXFN120N20 |
ETC |
HiPer FET Power MOSFETs |