IGT6E21 - GE

IGT6E21 Insulated Gate Bipolar Transistor

mTMlJ~~~ Insulated Gate Bipolar Transistor IGT6D21,E21 20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.145 0 This IGT'- Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of M.

Features

• Low VCE(SAT) - 2.5Vtyp@20A
• Ultra-fast turn-on -150 ns typical
• Polysilicon MOS gate - Voltage controlled turn on/off
• High current handling - 20 amps @ 900 C N-CHANNEl c o~ E CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0845121.471 r 0~~lx6M5AXl:l~~'35B(9'09) MAX T --u--n= SEATING PLANE --.I- 004311091 DIA 0038(097) I 426[1082, MIN CASE TEMP REFERENCE POINT .20(5.001 EMInER 0.16214.09, DIA 0.15(3.B41 2 HOLES o 440{1 1 18) 0420(10671 maximum ratings (TC = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage, VGE = OV Collector-Gate Vo.