IGT6E11 - GE

IGT6E11 Insulated Gate Bipolar Transistor

mTMlJ~~~ Insulated Gate Bipolar Transistor IGT6D11,E11 10 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) =0.27 il This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of M.

Features

• Low VCE(SAT) - 2.5V typ @ 10A
• Ultra-fast turn-on -100 ns typical
• Polysilicon MOS gate - Voltage controlled turn on/off
• High current handling - 10 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0845(2147J 06~~lXI'--6M5AXl~~~.35819.09) MAX T~ I- a 043( 1 09) OIA ---' 0038(097) I SEATING PLANE 426/10 82, MIN CASE TEMP REFERENCE POINT 20(5001 0.162(4 09/ DIA 015(3841 2 HOLES 0440(11 IBI o 420{1067j = maximum ratings (TC 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage, VGE = OV Collector-Gate Voltage, RGE .