Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
. . . . . . . . 1 Maximum ratings . . . 3 Thermal characteristics . . . .
• Enhancement mode transistor ‑ Normally OFF switch
• Ultra fast switching
• No reverse‑recovery charge
• Capable of reverse conduction
• Low gate charge, low output charge
• Superior commutation ruggedness
• ESD (HBM/CDM) JEDEC standards
Benefits
• Improves system efficiency
• Improves power density
• Enables highest operating frequency
• System cost reduction savings
• Reduces EMI
Potential applications
Industrial, telecom, datacenter SMPS, charger and adapter based on half‑bridge topologies (half‑bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC).
Pro.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IGT65R035D2 |
Infineon |
Power Transistor |
|
| 2 | IGT65R045D2 |
Infineon |
Power Transistor |
|
| 3 | IGT65R055D2 |
Infineon |
Power Transistor |
|
| 4 | IGT65R140D2 |
Infineon |
Power Transistor |
|
| 5 | IGT60R042D1 |
Infineon |
Power Transistor |
|
| 6 | IGT60R070D1 |
Infineon |
600V enhancement-mode Power Transistor |
|
| 7 | IGT60R190D1 |
Infineon |
Power Transistor |
|
| 8 | IGT60R190D1S |
Infineon |
600V enhancement-mode Power Transistor |
|
| 9 | IGT6D10 |
GE |
Insulated Gate Bipolar Transistor |
|
| 10 | IGT6D11 |
GE |
Insulated Gate Bipolar Transistor |
|
| 11 | IGT6D20 |
GE |
Insulated Gate Bipolar Transistor |
|
| 12 | IGT6D21 |
GE |
Insulated Gate Bipolar Transistor |
|