IGT6E20 - GE

IGT6E20 Insulated Gate Bipolar Transistor

mTMIT~~~ insulated Gate Bipolar Transistor IGT6D20,E20 20 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.12 n This IGT'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MO.

Features

• Low VCE(SAT) - 2.3V typ @ 20A " Ultra-fast turn-on - 200 ns typical
• Polysilicon MOS gate - Voltage controlled turn on/off e High current handling - 20 amps @ 100°C N-CHANNEL c .~ r: a CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.645(21.471 MAX
· 0~~X65l~
·35B(9.D9l MAX t~ SEATING PLANE 0.043(1.09) DIA.---.I!- 0.03810.971 --, .426110.82) MIN. CASE TEMP. REFERENCE POINT .20(5.00) 0.162(4.091 DIA. 0.15(3.841 2 HOLES 0.440(11.18) 0.420(10.671 maximum ratings (TC = 25°C) (unless otherwise specified) RATING Collector-Emitter Voltage, VGE = OV Collector-.