IGT6E10 - GE

IGT6E10 Insulated Gate Bipolar Transistor

mTMlJ~~~ Insulated Gate Bipolar Transistor Preliminary 26.4 4/85 IGT6D10,E10 10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 n This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS·gate turn onloff power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the hig.

Features

• Low VCE(SAT) - 2.5V typ @ 10A
• Ultra-fast turn-on - 150 ns typical
• Polysilicon MOS gate - Voltage controlled turn onloff
• High current handling -10 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) ~~~---t ~'''"''~" I:0.845121.47) M A X ' H .358(9.09) MAX O.043{1.09) OIA.-I10.038(0.97) .426110.82) MIN CASE TEMP. REFERENCE POINT .20(5.00) 0.162(4.09) OIA. 0.15(3.84) 2 HOLES 0.440(11.18) 0.420(10.67) maximum ratings (TC = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage, VGE = OV Collector-Gate Voltage. RGE = 1Mn.