IAUC26N10S5L245 - Infineon

IAUC26N10S5L245 Power Transistor

IAUC26N10S5L245 OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max ID 100 V 24.5 mW 26 A PG-TDSON-8-33 1 1 Type IAUC26N.

Features

• OptiMOS™ power MOSFET for automotive applications
• N-channel - Enhancement mode - Logic Level
• MSL1 up to 260°C peak reflow
• 175 °C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested Product Summary VDS RDS(on),max ID 100 V 24.5 mW 26 A PG-TDSON-8-33 1 1 Type IAUC26N10S5L245 Package Marking PG-TDSON-8-33 5N10L245 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Drain current Symbol Conditions ID V GS=10 V, Chip limitation1,2) Pulsed drain current2) Avalanche energy, single pulse2) I D,pulse E AS V GS=10V, DC current T a=85 °.