OptiMOS™-5 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IAUC100N08S5N043 Product Summary VDS RDS(on) ID 80 V 4.3 mW 100 A PG-TDSON-8 1 1 Type Package IAUC100N08S5N043 PG-TDSON-8 Marking 5N08043 Maxim.
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IAUC100N08S5N043
Product Summary VDS RDS(on) ID
80 V 4.3 mW 100 A
PG-TDSON-8
1 1
Type
Package
IAUC100N08S5N043 PG-TDSON-8
Marking 5N08043
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C, V GS=10V
T C=100 °C, V GS=10 V1)
Pulsed drain current2) Avalanche energy, single pulse2)
I D,pulse E AS
T C=25 °C I D=50 A
Avalanche current, sin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IAUC100N08S5N034 |
Infineon |
Power Transistor | |
2 | IAUC100N04S6L020 |
Infineon |
Power Transistor | |
3 | IAUC100N04S6L025 |
Infineon |
Power Transistor | |
4 | IAUC100N04S6N015 |
Infineon |
Power Transistor | |
5 | IAUC100N04S6N028 |
Infineon |
Power Transistor | |
6 | IAUC100N10S5L040 |
Infineon |
Power Transistor | |
7 | IAUC100N10S5L054 |
Infineon |
Power Transistor | |
8 | IAUC100N10S5N040 |
Infineon |
Power Transistor | |
9 | IAUC120N04S6L005 |
Infineon |
Power Transistor | |
10 | IAUC120N04S6L008 |
Infineon |
Power Transistor | |
11 | IAUC120N04S6L009 |
Infineon |
Power Transistor | |
12 | IAUC120N04S6N006 |
Infineon |
Power Transistor |