OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Normal Level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IAUC100N08S5N034 Product Summary VDS 80 V RDS(on),max ID 3.4 mW 100 A PG-TDSON-8-34 1 1 Type IAUC.
• OptiMOS™ power MOSFET for automotive applications
• N-channel - Enhancement mode - Normal Level
• MSL1 up to 260°C peak reflow
• 175 °C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IAUC100N08S5N034
Product Summary
VDS
80 V
RDS(on),max ID
3.4 mW 100 A
PG-TDSON-8-34
1 1
Type IAUC100N08S5N034
Package PG-TDSON-8-34
Marking 5N08034
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Drain current Pulsed drain current2)
ID I D,pulse
V GS=10 V, Chip limitation1,2) V GS=10V, DC current3) T a=85 °C, V GS=10 V, RthJA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IAUC100N08S5N043 |
Infineon |
Power Transistor | |
2 | IAUC100N04S6L020 |
Infineon |
Power Transistor | |
3 | IAUC100N04S6L025 |
Infineon |
Power Transistor | |
4 | IAUC100N04S6N015 |
Infineon |
Power Transistor | |
5 | IAUC100N04S6N028 |
Infineon |
Power Transistor | |
6 | IAUC100N10S5L040 |
Infineon |
Power Transistor | |
7 | IAUC100N10S5L054 |
Infineon |
Power Transistor | |
8 | IAUC100N10S5N040 |
Infineon |
Power Transistor | |
9 | IAUC120N04S6L005 |
Infineon |
Power Transistor | |
10 | IAUC120N04S6L008 |
Infineon |
Power Transistor | |
11 | IAUC120N04S6L009 |
Infineon |
Power Transistor | |
12 | IAUC120N04S6N006 |
Infineon |
Power Transistor |