OptiMOSTM-5 Power-Transistor Features • N-channel - Enhancement mode - Logic level • AEC qualified • MSL1 up to 260°C peak reflow • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) IAUC100N10S5L040 Product Summary VDS RDS(on) ID 100 V 4 mW 100 A PG-TDSON-8 1 Type IAUC100N10S5L040 Package PG-TDSON-8 Marking 5N10L040 Maximum rat.
• N-channel - Enhancement mode - Logic level
• AEC qualified
• MSL1 up to 260°C peak reflow
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
IAUC100N10S5L040
Product Summary VDS RDS(on) ID
100 V 4 mW
100 A
PG-TDSON-8
1
Type IAUC100N10S5L040
Package PG-TDSON-8
Marking 5N10L040
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage
ID
I D,pulse E AS I AS V GS
T C=25°C, V GS=10V T C=100°C, V GS=1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IAUC100N10S5L054 |
Infineon |
Power Transistor | |
2 | IAUC100N10S5N040 |
Infineon |
Power Transistor | |
3 | IAUC100N04S6L020 |
Infineon |
Power Transistor | |
4 | IAUC100N04S6L025 |
Infineon |
Power Transistor | |
5 | IAUC100N04S6N015 |
Infineon |
Power Transistor | |
6 | IAUC100N04S6N028 |
Infineon |
Power Transistor | |
7 | IAUC100N08S5N034 |
Infineon |
Power Transistor | |
8 | IAUC100N08S5N043 |
Infineon |
Power Transistor | |
9 | IAUC120N04S6L005 |
Infineon |
Power Transistor | |
10 | IAUC120N04S6L008 |
Infineon |
Power Transistor | |
11 | IAUC120N04S6L009 |
Infineon |
Power Transistor | |
12 | IAUC120N04S6N006 |
Infineon |
Power Transistor |