IAUC24N10S5L300 - Infineon

IAUC24N10S5L300 Power Transistor

IAUC24N10S5L300 OptiMOSTM-5 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on) ID 100 V 30 mW 24 A PG-TDSON-8 • N-channel - Enhancement mode - Logic level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • Green product (RoHS compliant) • 100% Avalanche tested 1 1 • Feasible for automatic .

Features

• OptiMOS™ - power MOSFET for automotive applications VDS RDS(on) ID 100 V 30 mW 24 A PG-TDSON-8
• N-channel - Enhancement mode - Logic level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• Green product (RoHS compliant)
• 100% Avalanche tested 1 1
• Feasible for automatic optical inspection (AOI) Type IAUC24N10S5L300 Package PG-TDSON-8 Marking 5N10L300 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source voltage I.