IAUC100N10S5N040 - Infineon

IAUC100N10S5N040 Power Transistor

OptiMOSTM-5 Power-Transistor Features • N-channel - Enhancement mode - Normal level • AEC qualified • MSL1 up to 260°C peak reflow • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) IAUC100N10S5N040 Product Summary VDS RDS(on) ID 100 V 4 m 100 A PG-TDSON-8 1 Type IAUC100N10S5N040 Package PG-TDSON-8 Marking 5N1N040 Maximum rat.

Features

• N-channel - Enhancement mode - Normal level
• AEC qualified
• MSL1 up to 260°C peak reflow
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI) IAUC100N10S5N040 Product Summary VDS RDS(on) ID 100 V 4 m 100 A PG-TDSON-8 1 Type IAUC100N10S5N040 Package PG-TDSON-8 Marking 5N1N040 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage ID I D,pulse E AS I AS V GS T C=25°C, V GS=10V T C=100°C, V GS=1.