IAUC120N04S6L005 - Infineon

IAUC120N04S6L005 Power Transistor

uper, IAUC120N04S6L005 OptiMOS™- 6 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 0.55 mW 120 A PG-TDSON-8-53 • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature 1 1 • Green Product (RoHS compliant) • .

Features

• OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 0.55 mW 120 A PG-TDSON-8-53
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature 1 1
• Green Product (RoHS compliant)
• 100% Avalanche tested Type IAUC120N04S6L005 Package Marking PG-TDSON-8-53 6N04L005 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Drain current Pulsed drain current5) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Ope.